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碳化硅(SiC) MOSFET使用一種全新技術(shù),與硅相比,該技術(shù)提供了卓越的開關(guān)性能和更高的可靠性。此外,低導(dǎo)通電阻和緊湊的芯片尺寸確保了低電容和柵極電荷。因此,系統(tǒng)優(yōu)勢(shì)包括最高效率、更快的工作頻率、更高的功率密度、更低的EMI和更小的系統(tǒng)尺寸。
Model Name | R(on) | Current | Vgs | Package | Status |
ASC100N650MT3 | 12mohm | 100A | 18V | TO-247-3 | Product |
ASC100N650MT4 | 12mohm | 100A | 18V | TO-247-4 | Product |
ASC100N650MT4PB | 12mohm | 100A | 15V | TO-247-4 | Product |
ASR12N650MD02 | 12mohm | 100A | 18V | TOLL | Product |
ASR35N650MD02 | 35mohm | 60A | 18V | TOLL | Product |
ASR35N650MD88 | 35mohm | 60A | 18V | PDFN8*8 | Product |
ASC60N650MT3 | 38mohm | 60A | 18V | TO-247-3 | Product |
ASC60N650MT4 | 38mohm | 60A | 18V | TO-247-4 | Product |
ASC60N650MT7 | 38mohm | 60A | 18V | TO-263-7 | Product |
ASC30N650MF3 | 60mohm | 30A | 18V | TO-220F | Product |
ASC30N650MT3 | 60mohm | 30A | 18V | TO-247-3 | Product |
ASC30N650MT4 | 60mohm | 30A | 18V | TO-247-4 | Product |
ASC30N650MT4PB | 60mohm | 30A | 15V | TO-247-4 | Product |
ASR60N650MD88 | 60mohm | 30A | 18V | PDFN8*8 | Product |
ASR90N650MD88PB | 90mohm | 25A | 12V | TDFN8*8 | Product |
ASR320N650MD56 | 320mohm | 8A | 12V | PDFN5*6 | Product |
ASR320N650MD88 | 320mohm | 8A | 12V | PDFN8*8 | Product |